Fabrication method for a semiconductor structure having a...

Details Fabrication method for a semiconductor structure having a... Fabrication method for a semiconductor structure having a...

2005-03-15

2005-03-15

Niebling, John F. (Department: 2812)

Semiconductor device manufacturing: process

Chemical etching

C438S710000, C438S714000, C438S424000

Reexamination Certificate

active

06867137

ABSTRACT:
The present invention provides a fabrication method for a semiconductor structure having a partly filled trench, having the following steps: provision of a semiconductor structure (1, 5) having a trench (2); filling of the trench (2) with a filling (10) in such a way that the filling (10) projects above a surface (OF) of the semiconductor structure (1, 5) by a first height (h1), the filling (10) covering the trench (2) and the periphery (20) of the trench (2); planarization of the filling (10) in a first etching step in such a way that the filling (10) is essentially planar with the surface (OF) of the semiconductor structure (1, 5); and sinking of the filling (10) in the trench (2) in a second etching step by a predetermined depth (T) proceeding from the surface of the semiconductor structure (1, 5); essentially the same plasma power and the same etchant composition being used for the first and second etching steps.

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