Hetero-bipolar transistor having the base interconnection...

Details Hetero-bipolar transistor having the base interconnection... Hetero-bipolar transistor having the base interconnection...

2005-08-23

2005-08-23

Munson, Gene M. (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

C257S201000, C257S586000, C257S587000, C257S615000, C257S745000, C257S773000

Reexamination Certificate

active

06933545

ABSTRACT:
The present invention provides a hetero-bipolar transistor having a new configuration of the interconnection. The bipolar transistor of the present invention includes the collector mesa, having the base and collector layers therein, includes a first side having a normal mesa surface and extending along the [01-1] orientation, and a second side having a reverse mesa surface and extending along the [011] orientation. The present HBT has a base interconnection, a portion of which diagonally intersects the first side of the collector mesa, accordingly, the breaking of the interconnection may not occur and the high frequency performance of the HBT may be enhanced because the width of the collector mesa is not necessary to widen to disposed the base interconnection on the first side.

REFERENCES:
patent: 5614423 (1997-03-01), Matsuoka et al.
patent: 6495869 (2002-12-01), Blayac et al.
patent: 6531722 (2003-03-01), Yaegashi et al.
patent: 6664610 (2003-12-01), Kawasaki et al.
patent: 6784064 (2004-08-01), Yaegashi et al.
patent: 11-260827 (1999-09-01), None

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