Field effect chalcogenide devices

Details Field effect chalcogenide devices Field effect chalcogenide devices

2005-11-29

2005-11-29

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S002000, C257S003000, C257S005000, C257S006000, C257S040000, C257S673000, C257S686000, C257S727000

Reexamination Certificate

active

06969867

ABSTRACT:
Multi-terminal field effect devices comprising a chalcogenide material. The devices include a first terminal, a second terminal and a field effect terminal. Application of a gate signal to the field effect terminal modulates the current passing through the chalcogenide material between the first and second terminals and/or modifies the holding voltage or current of the chalcogenide material between the first and second terminals. The devices may be used as interconnection devices in circuits and networks to regulate current flow between circuit or network elements.

REFERENCES:
patent: 3872492 (1975-03-01), Robbins
patent: 4015282 (1977-03-01), Shaw
patent: 5760462 (1998-06-01), Barron et al.
patent: 2003/0096497 (2003-05-01), Moore et al.

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