Method for forming floating gate in flash memory device

Details Method for forming floating gate in flash memory device Method for forming floating gate in flash memory device

2005-11-15

2005-11-15

Wilson, Christian (Department: 2891)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S424000, C438S435000

Reexamination Certificate

active

06964913

ABSTRACT:
The present invention is provided to form a floating gate of a flash memory device capable of restricting a thickness of a buffer oxide film to a thickness less than 50 Å to minimize increment in a thickness due to a wall oxidation process in the case of depositing the buffer oxide film prior to depositing the first polysilicon film and the pad nitride film, and reducing a thickness of the first polysilicon film with an HF dip time minimized in a pre-treatment cleaning process prior to depositing the second polysilicon film, and protecting the first polysilicon film from being attacked in a pad nitride film strip process, by removing at least 50% of the buffer oxide film in the pad nitride film strip process.

REFERENCES:
patent: 6326283 (2001-12-01), Liang et al.
patent: 6620681 (2003-09-01), Kim et al.
patent: 2002/0019113 (2002-02-01), Chung
patent: 2003/0203571 (2003-10-01), Rabkin et al.

Affiliated with

Also associated with

Rating

Method for forming floating gate in flash memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming floating gate in flash memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming floating gate in flash memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3453373