Semiconductor device and communication terminal using thereof

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Multiple housings

Reexamination Certificate

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C257S686000, C257S723000, C257S724000, C257S728000, C257S777000, C257S666000, C257S676000, C257S528000, C257S532000, C257S203000, C257S357000, C257S693000, C257S355000, C257S786000, C257S784000, C257S691000, C361S777000, C361S736000

Reexamination Certificate

active

06853063

ABSTRACT:
Wire bonding or printed wiring board leads or, alternatively, lead frames or equivalents thereof are used to electrically connect external electrodes of high withstand voltage capacitors formed on a plurality of semiconductor chips. A driver circuit for signal transmission or receiver circuit for signal receipt formed on the semiconductor chips are electrically connected with substrate-side electrodes of said high withstand voltage capacitors, causing the plurality of semiconductor chips to be received within either a single package or a single module. Using this arrangement, a semiconductor device is capable of achieving both dielectricity and size reduction.

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