Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With base region having specified doping concentration...
Reexamination Certificate
2005-03-29
2005-03-29
Zarabian, Amir (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With base region having specified doping concentration...
C257S412000
Reexamination Certificate
active
06873030
ABSTRACT:
A semiconductor device is fabricated by providing a substrate, and providing a dielectric layer on the substrate. A polysilicon body is formed on the dielectric layer, and a metal layer is provided on the polysilicon body. A silicidation process is undertaken to silicidize substantially the entire polysilicon body to form a gate on the dielectric. In an alternative process, a cap layer is provided on the polysilicon body, which cap layer is removed prior to the silicidation process. The polysilicon body is doped with a chosen specie prior to the silicidation process, which dopant, during the silicidation process, is driven toward the dielectric layer to form a gate portion having a high concentration thereof adjacent the dielectric, the type and concentration of this specie being instrumental in determining the work function of the formed gate.
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Krivokapic Zoran
Maszara Witold
Perkins Pamela E
Zarabian Amir
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