Semiconductor equipment with lateral and vertical MOS regions

Details Semiconductor equipment with lateral and vertical MOS regions Semiconductor equipment with lateral and vertical MOS regions

2005-10-25

2005-10-25

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S335000, C257S341000, C257S342000, C257S343000, C438S306000

Reexamination Certificate

active

06958543

ABSTRACT:
Semiconductor equipment includes a semiconductor substrate, a plurality of first type semiconductor devices having first and second device regions, a plurality of second type semiconductor devices having the first and second device regions, and upper and lower layer wirings disposed on the substrate. The upper and lower layer wirings electrically connect a plurality of first and second device regions together with a parallel connection, respectively. The lower layer wiring includes a first contact for connecting to the first device region and a second contact for connecting to the second device region. The first contact is concentrated into a predetermined area. The second contact surrounds the first contact. The upper layer wiring disposed on the predetermined area provides a pad area for connecting to an external circuit.

REFERENCES:
patent: 4636825 (1987-01-01), Baynes
patent: 4948754 (1990-08-01), Kondo et al.
patent: 5192989 (1993-03-01), Matsushita et al.
patent: 5412239 (1995-05-01), Williams
patent: 5672894 (1997-09-01), Maeda et al.
patent: 6133107 (2000-10-01), Menegoli
patent: A-H03-239369 (1991-10-01), None
patent: A-H07-263665 (1995-10-01), None
“International Rectifier”, IRF6150, PD-93943, pp. 2-3.
Hazel Schofield et al., FlipFET™ MOSFET Design for High Volume SMT Assembly,International Rectifier, pp. 1-6.
Hazel Schofield et al., Assembly of FlipFET™ Devices,International Rectifier, AN-1011, May 22, 2000, pp. 1-6.

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