Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor
Reexamination Certificate
2005-05-03
2005-05-03
Parekh, Nitin (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
C257S619000, C257S620000, C257S730000, C257S780000, C257S787000, C257S737000
Reexamination Certificate
active
06888222
ABSTRACT:
An object of the present invention is to provide a semiconductor device capable of adapting to an increase in the external terminals which can be arranged on the mount surface (a greater number of pins). A mesa-type semiconductor chip is mounted on a mount surface of a substrate which is a semiconductor chip carrying portion such that the side wall surface of the four side walls of the first semiconductor chip intersects the mount surface at an acute angle θ (0°<θ<90°). Further, a first pad formed on a main surface of the first semiconductor chip is electrically connected to a solder ball provided on an unmounted surface, via a first wiring layer, one end of which is connected to the first pad, and which extends along the main surface, the side wall surface, and the unmounted surface of the semiconductor chip.
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Nikkei Microdevices, Feb., 1999, p48-57.
Nikkei Microdevices, Feb., 2000, p50-53.
Oki Electric Industry Co. Ltd.
Parekh Nitin
Rabin & Berdo P.C.
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