Oscillator topology for very low phase noise operation

Oscillators – With particular source of power or bias voltage – Regulated

Reexamination Certificate

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Details

C331S1170FE, C331S1170FE, C331S175000, C331S176000, C331S17700V

Reexamination Certificate

active

06927643

ABSTRACT:
An oscillator circuit includes a tank circuit, first and second oscillator transistors, and a gain-cell tuning inductor. The tank circuit includes first and second ports, and is configured to resonate at one or more predefined frequencies. The first oscillator transistor includes first port, a second port coupled to the first port of the tank circuit, and a third port. The second oscillator transistor includes a first port, a second port coupled to the second port of the tank circuit, and a third port. The gain-cell tuning inductor is coupled between the third ports of the first and second oscillator transistors and is operable to conduct a biasing signal supplied thereto to the third ports of the first and second oscillator transistors.

REFERENCES:
patent: 6229406 (2001-05-01), Wang
patent: 2002/0060612 (2002-05-01), Traub
Zannoth, M. et. al., “A Single-Chip SI Bipolar 1.6 GHz VCO with Integrated-Bias Network,” IEEE Trans. MTT (NY), vol. 48, No. 2, Feb. 2000, pps. 203-205.
Li, H. et. al., “47 GHz VCO with Low Phase Noise Fabricated in a SiGe Bipolar Production Technology,” IEEE Microw. and Wireless Cmpnt. Ltrs, vol. 12, No. 3 Mar. 2002, pps 79-81.
Deranter, C. et. al. “High Data Rate Transmitter Circuits: RF CMOS Design and Techniques for Design Automation,” Kluwer Academic Publishers, ISBN 1402075456, pgs. 177-179; undated.
Ismail, A et al. “CMOS Differential LC Oscillator with Suppressed Up-Converted Flicker Noise,” IEEE Int'l Solid-State Circuits Conf., Sep. 2003; 8 pages.

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