Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Reexamination Certificate
2005-05-31
2005-05-31
Tran, Minhloan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
C257S081000, C257S098000, C257S099000, C257S100000, C257S103000
Reexamination Certificate
active
06900473
ABSTRACT:
A semiconductor light emitting device is disclosed in which a semiconductor multilayer structure including a light emitting layer is formed on a substrate and light is output from the opposite surface of the semiconductor multilayer structure from the substrate. The light output surface is formed with a large number of protrusions in the form of cones or pyramids. To increase the light output efficiency, the angle between the side of each protrusion and the light output surface is set to between 30 and 70 degrees.
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European Search Report.
Sekiguchi Hideki
Takahashi Koichi
Takimoto Kazuhiro
Yamashita Atsuko
Yoshitake Shunji
Kabushiki Kaisha Toshiba
Tran Minhloan
Tran Tan
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