Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With semiconductor element forming part
Reexamination Certificate
2005-05-03
2005-05-03
Tsai, H. Jey (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With semiconductor element forming part
C257S690000, C257S693000, C257S698000
Reexamination Certificate
active
06888233
ABSTRACT:
A method for providing conductive paths into a hermetically sealed cavity is described. The sealed cavity is formed utilizing a silicon-glass micro-electromechanical structure (MEMS) process and the method includes forming recesses on a glass substrate everywhere that a conductive path is to pass into the cavity, and forming conductive leads in and around the recesses. A glass layer is deposited over the substrate, into the recesses, and over the conductive leads and then planarized to expose portions of the conductive leads. A sealing surface is formed on at least a portion of the glass layer. Silicon is then bonded to the sealing surface of the planarized glass layer, the wafer being configured such that a portion of each lead is within the sealed cavity and a portion of each lead is outside the sealed cavity.
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International Search Report dated Jul. 16, 2004, Application No. PCT/US03/US20004/007277; 10 pages.
Horning Robert D.
Ridley Jeffrey A.
Armstrong Teasdale LLP
Honeywell International , Inc.
Luxton, Esq. Matthew
Tsai H. Jey
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