Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Reexamination Certificate
2005-03-29
2005-03-29
Rosasco, S. (Department: 1756)
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
C378S035000
Reexamination Certificate
active
06872495
ABSTRACT:
A method for fabricating a lithographic reflection mask in particular for patterning of semiconductor wafers, is described, and can be used for extremely small feature sizes below 100 nm. In known lithographic methods with EUV radiation (extreme ultraviolet), for the mask fabrication, a multilayer reflection layer is applied to a substrate. An absorber layer is deposited after the multilayer layer is patterned above the multilayer layer or is completely introduced into the latter. In the case of the method according to the invention, in contrast, the absorber layer is applied between the substrate and the reflection layer and/or on the side areas of the reflection layer. This has the advantage of reducing CD changes due to shadowing of structures lying above the reflection layer. Further advantages are, inter alia, smaller structure displacements and reduced asymmetrical intensity profiles of the reflected beams of radiation.
REFERENCES:
patent: 5411824 (1995-05-01), Vasudev et al.
patent: 6645679 (2003-11-01), La Fontaine et al.
patent: 0279670 (1988-08-01), None
John E. Bjorkholm: “EUV Lithography—The Successor to Optical Lithography?”,Intel Technology Journal, 3rd quarter 1998, pp. 1-10.
Greenberg Laurence A.
Locher Ralph E.
Rosasco S.
Stemer Werner H.
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