Thin film capacitor and method of manufacturing the same

Details Thin film capacitor and method of manufacturing the same Thin film capacitor and method of manufacturing the same

2005-02-08

2005-02-08

Thomas, Tom (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S516000, C257S068000, C257S071000

Reexamination Certificate

active

06853051

ABSTRACT:
A thin film capacitor comprising an insulating substrate, a capacitor structure located on the substrate, the capacitor structure having a dielectric layer sandwiched between a lower electrode layer and an upper electrode layer, and conductor members respectively connected to the lower electrode layer and the upper electrode layer, wherein at least the dielectric layer has a side face having a sufficient slope for preventing the short circuit of the upper electrode layer with the lower electrode layer through the conductor member. A method of manufacturing such a thin film capacitor is also disclosed.

REFERENCES:
patent: 5604145 (1997-02-01), Hashizume et al.
patent: 5858851 (1999-01-01), Yamagata et al.
patent: 6278150 (2001-08-01), Okudaira et al.
patent: 6617666 (2003-09-01), Yoshitomi et al.
patent: 6720608 (2004-04-01), Lee
patent: 6747334 (2004-06-01), Kitagawa et al.

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