Semiconductor laser element including optical waveguide...

Details Semiconductor laser element including optical waveguide... Semiconductor laser element including optical waveguide...

2005-03-29

2005-03-29

Leung, Quyen (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S046012

Reexamination Certificate

active

06873637

ABSTRACT:
In a semiconductor laser element: a lower cladding layer of a first conductive type, a lower optical waveguide layer made of In0.49Ga0.51P which is undoped or the first conductive type, an active layer made of Inx3Ga1-x3As1-y3Py3lattice-matching with GaAs (0<x3≦0.3 and 0≦y3≦0.5), an upper optical waveguide layer made of In0.49Ga0.51P which is undoped or a second conductive type, and a first upper cladding layer of the second conductive type are formed in this order above the substrate. The lower optical waveguide layer has a bandgap which gradually decreases with elevation within the lower optical waveguide layer, and the upper optical waveguide layer has a bandgap which gradually increases with elevation within the upper optical waveguide layer.

REFERENCES:
patent: 4974231 (1990-11-01), Gomyo
patent: 5173912 (1992-12-01), Iwase et al.
patent: 06-302910 (1994-10-01), None
J.L. Wade, et al./ 8.8W CW Power from Broad-Waveguide Al-Free Active-Region (λ=805NM) Diode Lasers/Electronics Letters, vol. 34, No. 11 pp. 1100 May 1998.

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