Ridge waveguide type photo semiconductor device and method...

Details Ridge waveguide type photo semiconductor device and method... Ridge waveguide type photo semiconductor device and method...

2005-03-08

2005-03-08

Tran, Thuy Vinh (Department: 2821)

Coherent light generators

Particular active media

Semiconductor

C372S043010, C372S044010, C372S045013

Reexamination Certificate

active

06865204

ABSTRACT:
The ridge waveguide type photo semiconductor device includes: a first cladding layer of a first conductivity type formed on a semiconductor substrate of the first conductivity type; an active layer formed on the first cladding layer; a second cladding layer of a second conductivity type formed on the active layer; a third cladding layer of the second conductivity type formed on the second cladding layer and being worked so as to have a ridge shape; and an impurity diffusion region formed in the second cladding layer and the active layer on both sides of the ridge-shaped third cladding layer and which has a higher resistance value than that of the second cladding layer below the ridge shape.

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U.S. Appl. No. 09/338,916, filed Jun. 23, 1999.
Masahiro Aoki et al., “InP-Based Reversed-Mesa Ridge-Waveguide Structure for High-Performance Long-Wavelength Laser Diodes”, IEEE Journal of Selected Topics in Quantum Electronics, vol. 3, No. 2, Apr. 1997, pp. 672-683.

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