Ion implantation system and ion implantation method

Details Ion implantation system and ion implantation method Ion implantation system and ion implantation method

2005-08-16

2005-08-16

Lee, John R. (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S492300, C250S309000

Reexamination Certificate

active

06930316

ABSTRACT:
In an ion implantation system including (a) an ion source (b) a mass analyzing portion, (c) an ion acceleration portion, (d) an ion beam focusing/deflecting portion, and (e) an end station chamber for implanting ions onto a semiconductor substrate. The ion source consists of plural ion sources being connected to the same mass analyzing portion in which any one of the plural ion sources is selected. Mass-separated ions from the ion source are led to the acceleration portion, and a stencil mask is arranged approximately to the semiconductor substrate in the end station chamber.

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