Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2005-08-23
2005-08-23
Quach, T. N. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S762000, C257S763000
Reexamination Certificate
active
06933609
ABSTRACT:
An insulating film covering a Cu interconnection is formed. A contact hole which partially exposes the surface of the Cu interconnection is formed in the insulating film. A series of steps (steps (a) to (d)) including (a) a step of continuously supplying WF6gas for a predetermined time, (b) a step of continuously exhausting the WF6gas atmosphere for a predetermined time, (c) a step of continuously supplying SiH4gas for a predetermined time, and (d) a step of continuously exhausting the SiH4gas atmosphere for a predetermined time, is repeatedly executed to form W nuclei in the contact hole. Then, a W film is buried into the contact hole. This interconnection structure formation method can reliably bury the W film into the contact hole while preventing Cu elution from the Cu interconnection to the W plug.
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Wolf, S., Silicon Processing For the VLSI Era, vol. 2, Lattice Press, pp. 190-191.
Fujitsu Limited
Quach T. N.
Westerman Hattori Daniels & Adrian LLP
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