Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1995-11-29
1997-02-11
Munson, Gene M.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257229, 377 58, 377 60, H01L 27148, H01L 29768, G11C 1928
Patent
active
056024070
ABSTRACT:
A switched CCD electrode photodetector includes a substrate made of first semi-conductor type, a drain made of a second semi-conductor type formed in the substrate, a collection well made of the second semi-conductor type formed in the substrate, and a switched CCD electrode resistor formed between the drain and the collection well. The collection well is operable in cooperation with a photosensitive region. The switched CCD electrode resistor includes a channel region defined in the substrate and having a first end disposed adjacent to the collection well and a second end disposed adjacent to the drain. The switched CCD electrode resistor also includes a first electrode insulatively spaced from and disposed over the first end and a second electrode insulatively spaced from and disposed over the second end.
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Chamberlain Savvas G.
Washkurak William D.
Dalsa Inc.
Munson Gene M.
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