CMOS imager and method of formation

Details CMOS imager and method of formation CMOS imager and method of formation

2005-08-09

2005-08-09

Crane, Sara (Department: 2811)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S232000, C438S237000, C438S328000

Reexamination Certificate

active

06927089

ABSTRACT:
A CMOS imager having multiple graded doped regions formed below respective pixel sensor cells is disclosed. A deep retrograde p-well is formed under a red pixel sensor cell of a semiconductor substrate to increase the red response. A shallow p-well is formed under the blue pixel sensor cell to decrease the red and green responses, while a shallow retrograde p-well is formed below the green pixel sensor cell to increase the green response and decrease the red response.

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patent: 6330113 (2001-12-01), Slagle et al.
patent: 2002/0058353 (2002-05-01), Merrill

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