Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2005-04-12
2005-04-12
Thomas, Tom (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S099000, C257S100000, C257S081000
Reexamination Certificate
active
06878971
ABSTRACT:
A transparent base having a GaN semiconductor light-emitting device fixed thereon with a transparent adhesive is fitted to lead frames by flip chip bonding in such a manner that the light from the device is emitted outside through the substrate of the device, the adhesive, the base, and a sealing resin in this order. The apparatus has high reliability because the sealing resin in the dominant direction of light emission is protected against color change due to the heat generated from the device.
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Japanese Office Action dated Mar. 2, 2004.
Lee Eugene
McGinn & Gibb PLLC
Thomas Tom
Toyoda Gosei Co,., Ltd.
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