Semiconductor device with joint structure having lead-free...

Details Semiconductor device with joint structure having lead-free... Semiconductor device with joint structure having lead-free...

2005-04-12

2005-04-12

Tran, Thien F (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Bump leads

C257S738000, C257S748000, C257S779000, C257S780000, C257S781000

Reexamination Certificate

active

06879041

ABSTRACT:
The impact strength resistance of a solder joint portion of a semiconductor device is improved. The semiconductor device has a joint structure wherein a jointing layer which does not contain sulfur substantially is arranged between an underlying conductive layer and a lead-free solder layer and further between the jointing layer and the lead-free solder layer is formed an alloy layer comprising elements of these layers.

REFERENCES:
patent: 6384344 (2002-05-01), Asai et al.
patent: 6548898 (2003-04-01), Matsuki et al.
patent: 06-034983 (1994-02-01), None
patent: 2001-144214 (2001-05-01), None
patent: 2002-146548 (2002-05-01), None
Karashima, Takashi et al., “Solder Joint Reliability of BGA Package Using Pb-Free Solder Ball”,MES 2001,Oct. 2001 pp. 47-50.

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