Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates
Reexamination Certificate
2005-05-31
2005-05-31
Lebentritt, Michael S. (Department: 2812)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
C438S458000
Reexamination Certificate
active
06900114
ABSTRACT:
When a bonded substrate stack prepared by bonding a first substrate in which a single-crystal Si layer is formed on a porous layer, and an insulating layer is formed on the single-crystal Si layer to a second substrate is to be separated at the porous layer, serrate defects at the peripheral portion of the separated substrates are prevented. A fluid is ejected from an ejection nozzle (112) and injected into the porous layer of a bonded substrate stack (30) while rotating the bonded substrate stack (30) about an axis (C) in a direction (R), thereby separating the bonded substrate stack (30) into two substrates at the porous layer. When the peripheral portion of the bonded substrate stack (30) is to be separated, the ejection nozzle (112) is located within a range (B).
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Kurisu Hirokazu
Ohmi Kazuaki
Sakaguchi Kiyofumi
Yanagita Kazutaka
Yonehara Takao
Canon Kabushiki Kaisha
Lebentritt Michael S.
Morgan & Finnegan , LLP
Roman Angel
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