Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2005-01-04
2005-01-04
Kang, Donghee (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S431000, C257S449000, C257S465000, C257S466000, C136S250000, C136S256000, C136S258000, C438S063000
Reexamination Certificate
active
06838743
ABSTRACT:
This invention relates an optoelectronic material comprising a uniform medium with a controllable electric characteristic; and semiconductor ultrafine particles dispersed in the medium and having a mean particle size of 100 nm or less, and an application device using the same. This invention also relates to a method of manufacturing an optoelectronic material by irradiating a laser beam onto a first target of a semiconductor material, placed in a reaction chamber in low pressure rare gas ambient, and a second target of a medium material with a controllable electric characteristic, placed in the reaction chamber, condensing/growing a semiconductor material ablated from the first target to be collected as ultrafine particles having a mean particle size of 100 nm or smaller on a substrate placed in the reaction chamber, and condensing/growing a medium material ablated from the second target to be collected on the substrate placed in the reaction chamber, thus forming an ultrafine-particles dispersed layer having semiconductor ultrafine particles dispersed in the medium on the substrate.
REFERENCES:
patent: 4625071 (1986-11-01), Delahoy et al.
patent: 5017308 (1991-05-01), Iijima et al.
patent: 5079186 (1992-01-01), Narusawa
patent: 5260957 (1993-11-01), Hakimi et al.
patent: 5279868 (1994-01-01), Ohtsuka et al.
patent: 5371379 (1994-12-01), Narusawa
patent: 5411826 (1995-05-01), Yashiki
patent: 5425922 (1995-06-01), Kawaguchi
patent: 5958574 (1999-09-01), Sptiled et al.
patent: 6157047 (2000-12-01), Fujita et al.
patent: 6239453 (2001-05-01), Yamada et al.
patent: 0617472 (1994-09-01), None
patent: 0622439 (1994-11-01), None
patent: 61283175 (1986-12-01), None
patent: 62-66260 (1987-03-01), None
patent: 1-253193 (1989-10-01), None
patent: 2-216877 (1990-08-01), None
patent: 4-112584 (1992-04-01), None
patent: 5-24826 (1993-02-01), None
patent: 5-129648 (1993-05-01), None
patent: 5-206514 (1993-08-01), None
patent: 5-206515 (1993-09-01), None
patent: 7-50432 (1995-02-01), None
patent: 7-52670 (1995-02-01), None
patent: 7-58358 (1995-03-01), None
patent: 7-58361 (1995-03-01), None
patent: 7-86164 (1995-03-01), None
patent: 7-237995 (1995-09-01), None
patent: 8-181341 (1996-07-01), None
patent: 8-288540 (1996-11-01), None
patent: 8-306485 (1996-11-01), None
patent: 8-307011 (1996-11-01), None
patent: 9-212105 (1997-08-01), None
patent: 9616114 (1996-05-01), None
Yuka Yamada et al., Jpn. J. Appl. Phys., vol. 35 (1996), pp. 1361-1365, Part I, No. 2B, Feb. 1996, “Optical Properties Silicon Nanocrystallites Prepared by Excimer Laser Ablation in Inert Gas”.
Canham, Applied physics Letters, vol. 57, No. 10, pp. 1046-1048 (1990).
Pavesi et al., Applied Phisics Letters, vol. 67(22), pp. 3280-3282 (1995).
Copy of an English Lauguage Abstract of JP-A-8-306485.
Copy of an English Language Abstract of JP-A-4-112584.
Copy of an English Language Abstract of JP-A-8-307011.
Copy of an English Language Abstract of JP-A-2-216877.
Copy of an English Language Abstract of JP-A-7-237995.
Copy of an English Language Abstract of JP-A-62-066260.
Copy of an English Language Abstract of JP-A-61-A-283175.
Copy of an English Language Abstract of JP-A-5-024826.
Yoshida et al., Optical Engineering Contact, vol. 34, No. 10 (Oct. 1996), pp. 534-545 Production of Silicon Ultrafine Particles by Rare-Gas Atmosphere Pulse Laser Deposition.
English Language Abstract of JP 7-58358.
English Language Abstract of JP 7-58361.
Colvin et al., “Light-Emitting Diodes Made from Cadmium Selenide Nanocrystals and Asemiconducting Polymer”, NATURE, vol. 370, No. 6488, London, Aug. 4, 1994.
Dabbousi et al., entitled “Electroluminescence from CdSe quantum-dot/polymer composites”, Applied Physics Letters, vol. 66, No. 11, New York, Mar. 13, 1995.
English Language Abstract of JP 9-212105.
English Language Abstract of JP 1-253193.
English Language Abstract of JP 8-181341.
English Language Abstract of JP 5-206515.
B.O. Dabbousi et al., “Electrolumiscence from CdSe quantum-dot/polymer composites”, Appl. Phys. Lett. 66 (11), Mar. 13, 1995, pp. 1316-1318.
Tetsuy Makimura et al., “Fabrication of Visible Light Emitting Ultrafine Silicon Powder by Laser Abrasion”, Surface , vol. 34, No. 8., pp. 27-33 (1996)—English translation of portions thereof.
Kenchi IGA et al., “Light Emitting Surface Laser”, Ohm-Sha, pp. 105-119 (1990)—English translation of portion thereof.
Yakehito Yoshida et al., “8p-V-17: Silicon Ultrafine Particles Prepared by Laser Abrasion in Inert Gas Ambient (IV), Electrical Properties”, Extended Abstracts of the 57th Meeting of The Japan Society of Applied Physics No. 2, pp. 650 (1996).
Tetsuy Makimura et al., “Fabrication of Visible Light Emitting Ultrafine Silicon Powder by Laser Abrasion”, Surface, vol. 34, No. 8., pp. 27-33 (1996).
English Language Abstract of JP 7-50432.
English Language Abstract of JP 5-129648.
English Language Abstract of JP 8-288540.
English Language Abstract of JP 7-86164.
Tetsuy Makimura et al., “Fabrication Of Visible Light Emitting Ultrafine Silicon Powder by Laser Abrasion”, Surface, vol. 24, No. 8., pp. 27-33 (1996).
Kenchi IGA et al., “Light Emitting Surface Laser”, Ohm-Sha, pp. 105-119 (1990).
Yakehito Yoshida et al., “8p-V-17: Silicon Ultrafine Particles Prepared by Laser Abrasion in Inert Gas Ambient (IV), Electrical Properties”, Extended Abstracts of the 57thMeeting of The Japan Society of Applied Physics No. 2, pp. 680 (1996).
Matsuda Yuji
Mutoh Katsuhiko
Takeyama Shigeru
Yamada Yuka
Yoshida Takehito
Greenblum & Bernstein P.L.C.
Kang Donghee
Matsushita Electric - Industrial Co., Ltd.
LandOfFree
Optoelectronic material, device using the same and method... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Optoelectronic material, device using the same and method..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Optoelectronic material, device using the same and method... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3438872