Method of patterning photoresist on a wafer using a...

Details Method of patterning photoresist on a wafer using a... Method of patterning photoresist on a wafer using a...

2005-09-06

2005-09-06

Letscher, Geraldine (Department: 1752)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C430S322000, C430S323000, C430S324000

Reexamination Certificate

active

06939650

ABSTRACT:
A photoresist layer on a semiconductor wafer is patterned using a mask with an absorbing layer that has been repaired by using an additional light-absorbing carbon layer that collects ions that are used in the repair process. After the repair has been completed, the ions that are present in the carbon layer are removed by removing the portion of the carbon layer that is not covered by the absorbing layer. Thus, the absorbing layer, which contains the pattern that is to be exposed on the photoresist layer, also acts as a mask in the removal of the portion of the carbon layer that contains the ions. Thereby the ions that are opaque at the particular wavelength being used are removed from the areas where light is intended to pass through the mask to the photoresist. The buffer layer is made absorbing to avoid problems with reflections at interfaces thereof.

REFERENCES:
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patent: 6596465 (2003-07-01), Mangat et al.
patent: 2003/0190532 (2003-10-01), Yan
Wasson, J.R. et al., “Writing, repairing, and inspecting of extreme ultraviolet lithography reticles considering the impact of the materials,” J. Vac. Sci. Technol. B 19(6), Nov./Dec. 2001, American Vacuum Society, pp. 2635-2640.

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