Temperature-insensitive bias circuit for high-power amplifiers

Details Temperature-insensitive bias circuit for high-power amplifiers Temperature-insensitive bias circuit for high-power amplifiers

2005-09-20

2005-09-20

Nguyen, Khanh V. (Department: 2817)

Amplifiers

With semiconductor amplifying device

Including particular biasing arrangement

C330S285000

Reexamination Certificate

active

06946911

ABSTRACT:
An exemplary bias circuit is coupled to an amplifier. The bias circuit comprises a first bipolar transistor, a second bipolar transistor and a third bipolar transistor. The first bipolar transistor has a base connected to a first node, and the first node is connected to a reference voltage through a first resistor. The second bipolar transistor has a base connected to the first node. The third bipolar transistor has a collector connected to the first node and a base connected to an emitter of the first bipolar transistor at a second node. An emitter of the second bipolar transistor is connected to a base of a fourth bipolar transistor associated with the amplifier, and the second bipolar transistor does not have a resistor connected to the emitter of the second bipolar transistor.

REFERENCES:
patent: 6331799 (2001-12-01), Miyazawa
patent: 6556082 (2003-04-01), Wang et al.

Affiliated with

Also associated with

Rating

Temperature-insensitive bias circuit for high-power amplifiers does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Temperature-insensitive bias circuit for high-power amplifiers, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Temperature-insensitive bias circuit for high-power amplifiers will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3437273