Static information storage and retrieval – Addressing – Plural blocks or banks
Reexamination Certificate
2005-10-18
2005-10-18
Auduong, Gene N. (Department: 2827)
Static information storage and retrieval
Addressing
Plural blocks or banks
C365S195000, C365S230040
Reexamination Certificate
active
06956786
ABSTRACT:
A random access memory comprises a plurality of data pads and an array of memory cells comprising a first portion of memory cells and a second portion of memory cells. The random access memory comprises a first line configured to receive first data signals between the first portion of memory cells and the data pads and a second line configured to receive second data signals between the second portion of memory cells and the data pads. The first portion of memory cells is configured to be made inaccessible to eliminate the first data signals and a first number of the data pads and the second portion of memory cells is configured to be made inaccessible to eliminate the second data signals and a second number of the data pads.
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Le Thoai Thai
Partsch Torsten
Auduong Gene N.
Dicke, Billig & Czaja P.L.L.C.
Infineon Technologies North America Corp.
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