Method for wafer-level burn-in stressing of semiconductor...

Details Method for wafer-level burn-in stressing of semiconductor... Method for wafer-level burn-in stressing of semiconductor...

2005-03-15

2005-03-15

Pert, Evan (Department: 2829)

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

Reexamination Certificate

active

06867612

ABSTRACT:
A large-scale substrate carries semiconductor devices and at least one pair of common conductive regions in communication therewith. Each common conductive region is configured to be electrically connected with both a force contact and a sense contact of burn-in stressing equipment. Such equipment includes at least one pair of force contacts for applying a force voltage across a pair of common conductive regions and, thus, across the large-scale substrate. A corresponding pair of sense contacts facilitates monitoring of a voltage applied across each of the semiconductor devices by the force contacts. Methods and systems for evaluating a voltage that has been applied to two or more semiconductor devices by way of a single pair of force contacts are also disclosed, as are methods and systems for, in response to a measured voltage, modifying the force voltage so that a desired voltage may be applied across each of the semiconductor devices.

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patent: 6069480 (2000-05-01), Sabounchi et al.
patent: 6340302 (2002-01-01), Ladd

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