Memory device and method for writing data in memory cell...

Details Memory device and method for writing data in memory cell... Memory device and method for writing data in memory cell...

Filed on

2005-10-04

Date issued

2005-10-04

Examiner

Mai, Son (Department: 2827)

Patent Class

Static information storage and retrieval

SubClass

Addressing

Other Related Categories

C365S149000, C365S189090

Type

Reexamination Certificate

Status

active

Patent number

06952377

Description

ABSTRACT:
Provided are a method of writing data into a memory cell with a boosted write voltage and a memory device that performs the method. The method involves (a) transmitting data input in response to a write command to a bitline; (b) writing the input data on the bitline into a memory cell capacitor via a memory cell transistor; (c) generating a write boosting signal in response to the write command and a bitline precharge signal; (d) boosting a voltage of a capacitor connected between the write boosting signal and the bitline in response to the write boosting signal; (e) boosting a voltage of the bitline to a predetermined level; and (f) rewriting the input data into the memory cell capacitor with the boosted voltage of the bitline.

REFERENCES:
patent: 5933386 (1999-08-01), Walker
patent: 6055192 (2000-04-01), Mobley
patent: 6169701 (2001-01-01), Eto
patent: 6751152 (2004-06-01), Hsu
patent: 6876590 (2005-04-01), Joachim
patent: 10-0214462 (1999-05-01), None

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