Method of forming a resist pattern and fabricating tapered...

Details Method of forming a resist pattern and fabricating tapered... Method of forming a resist pattern and fabricating tapered...

2005-05-31

2005-05-31

Everhart, Caridad (Department: 2825)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S798000, C438S715000, C438S949000, C430S296000, C430S311000

Reexamination Certificate

active

06900141

ABSTRACT:
A resist pattern for fabricating a microelectronic device is irradiated with an energy beam, raising the glass transition temperature of the upper parts of the resist pattern, then baked, causing a transition to a glassy state in lower parts of the resist pattern, which flow viscously so that the resist pattern assumes a tapered cross sectional shape. When this tapered resist pattern is used as an etching mask, tapered features can be formed in the device. In particular, tapered contact holes can be formed, providing an increased alignment tolerance and enabling the size of the device to be reduced.

REFERENCES:
patent: 5096802 (1992-03-01), Hu
patent: 6057081 (2000-05-01), Yunogami et al.
patent: 6358670 (2002-03-01), Wong et al.
patent: 6627384 (2003-09-01), Kim et al.
patent: 2000-182940 (2000-06-01), None
patent: 2001-307993 (2001-11-01), None
patent: 2001-326153 (2001-11-01), None
patent: 2001-332484 (2001-11-01), None

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