Nitride semiconductor device

Details Nitride semiconductor device Nitride semiconductor device

2005-01-04

2005-01-04

Baumeister, Bradley (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular dopant concentration or concentration profile

C257S097000, C257S103000, C257S190000, C257S615000

Reexamination Certificate

active

06838705

ABSTRACT:
The present invention provides a nitride semiconductor light emitting device with an active layer of the multiple quantum well structure, in which the device has an improved luminous intensity and a good electrostatic withstanding voltage, thereby allowing the expanded application to various products. The active layer7is formed of a multiple quantum well structure containing InaGa1−aN (0≦a<1). The p-cladding layer8is formed on said active layer containing the p-type impurity. The p-cladding layer8is made of a multi-film layer including a first nitride semiconductor film containing Al and a second nitride semiconductor film having a composition different from that of said first nitride semiconductor film. Alternatively, the p-cladding layer8is made of single-layered layer made of AlbGa1−bN (0≦b≦1). A low-doped layer9is grown on the p-cladding layer8having a p-type impurity concentration lower than that of the p-cladding layer8.A p-contact layer is grown on the low-doped layer9having a p-type impurity concentration higher than those of the p-cladding layer8and the low-doped layer9.

REFERENCES:
patent: 5146465 (1992-09-01), Khan et al.
patent: 5656832 (1997-08-01), Ohba et al.
patent: 5679965 (1997-10-01), Schetzina
patent: 5932896 (1999-08-01), Sugiura et al.
patent: 5959307 (1999-09-01), Nakamura et al.
patent: 6172382 (2001-01-01), Nagahama et al.
patent: 6337493 (2002-01-01), Tanizawa et al.
patent: 1014455 (2000-06-01), None
patent: 1 017 113 (2000-07-01), None
patent: 06151966 (1994-05-01), None
patent: 07249795 (1995-09-01), None
patent: 08051251 (1996-02-01), None
patent: 08097468 (1996-04-01), None
patent: 08228025 (1996-09-01), None
patent: 08330629 (1996-12-01), None
patent: 09232629 (1997-09-01), None
patent: 09298341 (1997-11-01), None
patent: 10135514 (1998-05-01), None
patent: 11031841 (1999-02-01), None
patent: 11-177175 (1999-02-01), None
patent: 11068155 (1999-03-01), None
patent: WO 9905728 (1999-02-01), None
Partial translation of JP 11-031841, Feb. 2, 1999.*
Partial translation of JP 11-068155, Mar. 9, 1999.*
Shuji Nakamura et al., “Present Status of InGaN/GaN/AlGaN-Based Laser Diodes” Jpn. J. Appl. Phys. vol. 36 (1997) pp. L1568-L1571, Part 2, No. 12A, Dec. 1, 1997.
Shuji Nakamura et al., “InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices” Jpn. J. Appl. Phys. vol. 36 (1997) ppl. L1568-L1571 Part 2, No. 12A, Dec. 1, 1997.
Shuji Nakamura et al., “InxGa(1-x)N/InyGa(1-7)N superlattices grown on GaN films” J. Appl. Phys., vol. 74, No. 6, Sep. 15, 1993, pp. 3911-3915.

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