Piezoelectric/electrostrictive film device

Details Piezoelectric/electrostrictive film device Piezoelectric/electrostrictive film device

2005-07-19

2005-07-19

Budd, Mark (Department: 2834)

Electrical generator or motor structure

Non-dynamoelectric

Piezoelectric elements and devices

C310S328000, C310S330000, C310S358000

Reexamination Certificate

active

06919667

ABSTRACT:
A piezoelectric/electrostrictive film device is provided, including a piezoelectric/electrostrictive layer and at least a pair of electrodes formed on the piezoelectric/electrostrictive layer. A perovskite piezoelectric/electrostrictive material of the piezoelectric/electrostrictive layer contains Pb, and the perovskite piezoelectric/electrostrictive material contains MnO2in an amount of 0.1 to 0.5% by weight. Specifically, the perovskite piezoelectric/electrostrictive material contains Pb(Mg1/3Nb2/3)O3—PbZrO3—PbTiO3in which a part of Pb is substituted with Sr.

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Anzai, K., “Preparation of Electronic Materials by Electrophoretic Deposition”, Denki Kagaku 53, No. 1 (1985), pp. 63-68 (w/English Translation).
Goto, A.; Hamagami, J.; Umegaki, T.; and Yamashita, K., “PbZrO3/PbTiO3Composite Ceramics Fabricated by Electrophoretic Deposition,” Proceedings of First Symposium on Higher-Order Ceramic Formation Method Based on Electrophoresis 1998, pp. 5-6 (w/Englsih Translation).
Yamashita, K., “Hybridization of Ceramics by Electrophoretic Deposition,” Proceedings of First Symposium on Higher-Order Ceramic Formation Method Based on Electrophoresis 1998, pp. 23-24 (w/English Translation).
U.S. Appl. No. 10/241,414, filed Sep. 11, 2002, Yamaguchi et al.

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