Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Reexamination Certificate
2005-03-22
2005-03-22
Loke, Steven (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
C257S263000, C257S264000, C257S266000, C257S268000, C257S269000, C257S285000, C257S287000
Reexamination Certificate
active
06870189
ABSTRACT:
A junction field effect transistor (JFET) is provided that is capable of a high voltage resistance, high current switching operation, that operates with a low loss, and that has little variation. This JFET is provided with a gate region (2) of a second conductivity type provided on a surface of a semiconductor substrate, a source region (1) of a first conductivity type, a channel region (10) of the first conductivity type that adjoins the source region, a confining region (5) of the second conductivity type that adjoins the gate region and confines the channel region, a drain region (3) of the first conductivity type provided on a reverse face, and a drift region (4) of the first conductivity type that continuously lies in a direction of thickness of the substrate from a channel to a drain. A concentration of an impurity of the first conductivity type in the drift region and the channel region is lower than a concentration of an impurity of the first conductivity type in the source region and the drain region and a concentration of an impurity of the second conductivity type in the confining region.
REFERENCES:
patent: 5391897 (1995-02-01), Nonaka
patent: 5396085 (1995-03-01), Baliga
patent: 6313482 (2001-11-01), Baliga
patent: 53078177 (1978-07-01), None
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Mitlehner et al., Article Entitled: “Dynamic characteristics of high voltage 4H-SiC vertical JFETs.”; 1999 IEEE; pp. 339-342.
Harada Shin
Hirotsu Ken-ichi
Kimoto Tsunenobu
Matsunami Hiroyuki
Fasse W. F.
Fasse W. G.
Loke Steven
Sumitomo Electric Industries Ltd.
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