Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2005-03-29
2005-03-29
Zarabian, Amir (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S462000, C257S431000, C257S432000, C257S437000
Reexamination Certificate
active
06873025
ABSTRACT:
A photodiode includes a first conductivity type semiconductor substrate or a first conductivity type semiconductor layer; a second conductivity type semiconductor layer provided on the first conductivity type semiconductor substrate or the first conductivity type semiconductor layer; an anti-reflection film provided on a surface of a portion of the second conductivity type semiconductor layer which is in a light receiving area; a first conductive layer provided in an area in the vicinity of the light receiving area; and a passivation layer provided on the first conductive layer. Light incident on the photodiode is detected by a junction of the one of the first conductivity type semiconductor substrate and the first conductivity type semiconductor layer, and the second conductivity type semiconductor layer. The area in the vicinity of the light receiving area includes a window area having an opening in the passivation layer for partially exposing the first conductive layer.
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Stanley Wolf, Silicon Processing for the VLSI Era, 1990, vol. II, 273-275.
Fukunaga Naoki
Hayashida Shigeki
Natsuaki Kazuhiro
Ohkubo Isamu
Wada Hideo
Lewis Monica
Nixon & Vanderhye P.C.
Sharp Kabushiki Kaisha
Zarabian Amir
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