Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity
Reexamination Certificate
2005-05-31
2005-05-31
Ngô, Ngân V. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Tunneling through region of reduced conductivity
C257S295000, C257S421000
Reexamination Certificate
active
06900455
ABSTRACT:
A multilayer dielectric tunnel barrier structure and a method for its formation which may be used in non-volatile magnetic memory elements comprises an ALD deposited first nitride junction layer formed from one or more nitride monolayers i.e., AlN, an ALD deposited intermediate oxide junction layer formed from one or more oxide monolayers i.e., AlxOy, disposed on the first nitride junction layer, and an ALD deposited second nitride junction layer formed from one or more nitride monolayers i.e., AlN, disposed on top of the intermediate oxide junction layer. The multilayer tunnel barrier structure is formed by using atomic layer deposition techniques to provide improved tunneling characteristics while also providing anatomically smooth barrier interfaces.
REFERENCES:
patent: 6347049 (2002-02-01), Childress et al.
patent: 6617173 (2003-09-01), Sneh
patent: 2002/0153579 (2002-10-01), Yamamoto
patent: 2003/0003635 (2003-01-01), Paranjpe et al.
Dickstein , Shapiro, Morin & Oshinsky, LLP
Micro)n Technology, Inc.
Ngo Ngan V.
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