Centrifugal forming thin films and semiconductors and semiconduc

Details Centrifugal forming thin films and semiconductors and semiconduc Centrifugal forming thin films and semiconductors and semiconduc

1977-04-15

1978-07-18

Tufman, W.

Coating apparatus

With means to apply electrical and/or radiant energy to work...

With electromagnetic and/or electrostatic removal of...

29572, 118 52, 136 89CC, 156622, 427 86, H01L 2348

Patent

active

041019253

ABSTRACT:
A method and apparatus for centrifugally forming thin semiconductor films or layers wherein centrifugal force is applied to a molten single-crystal forming material to overcome surface tension and evenly spread the material along a substrate surface substantially parallel to the axis of rotation. The material is thereafter cooled, uniformly or progressively from a seed single crystal, to form a thin layer or film of crystalline material. Desirably, the films or layers will be substantially single crystals. The process and apparatus are useful in forming thin, semiconductor crystal layers useful, for example, in solar cells. Semiconductor devices according to the invention have a porous graphite substrate, a thin film or layer of silicon and a gridwork plated onto the silicon. The interface between the silicon grid graphite substrate is substantially free from silicon carbide.

REFERENCES:
patent: 1630045 (1927-05-01), Yeomans
patent: 1831310 (1931-11-01), Lindemuth
patent: 2178163 (1939-10-01), Davidson
patent: 3672429 (1972-06-01), Lajoye
patent: 3857436 (1974-12-01), Petrov
patent: 3984256 (1976-10-01), Fletcher
patent: 4052782 (1977-10-01), Weinstein

Affiliated with

Also associated with

Rating

Centrifugal forming thin films and semiconductors and semiconduc does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Centrifugal forming thin films and semiconductors and semiconduc, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Centrifugal forming thin films and semiconductors and semiconduc will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-342915