Field effect transistor with a short channel length

Details Field effect transistor with a short channel length Field effect transistor with a short channel length

1977-03-09

1978-07-18

Wojciechowicz, Edward J.

357 22, H01L 2978

Patent

active

041019229

ABSTRACT:
A field effect transistor with a MIS gate arrangement having a source and drain formed in a semiconductor body and including an electrically conductive region additionally provided which lies beneath the source zone and which has a conductivity opposite to and/or electrical conductivity which is higher than the semiconductor body which surrounds the zone and in which in the controllable field effect gate the electrically conductive zone is spaced a distance from the gate and the boundary surface and wherein the gate insulation layer projects laterally a space relative to the source zone which is approximately 1 to 10 times the thickness of the gate insulation layer and the distance from the gate arrangement to the boundary surface is 1 to 5 times the thickness.

REFERENCES:
patent: 3982263 (1976-09-01), Dobkin
patent: 4007478 (1977-02-01), Yagi

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