Light-emitting diode

Details Light-emitting diode Light-emitting diode

2005-05-03

2005-05-03

Pham, Hoai (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C257S084000, C257S094000, C257S098000, C257S103000

Reexamination Certificate

active

06888165

ABSTRACT:
An n-GaN low-temperature buffer layer, an n-GaN buffer layer, an n-In0.05Ga0.95N buffer layer, an n-Al0.15Ga0.85N clad layer, an n-GaN optical guide layer, an undoped active layer, a p-GaN optical guide layer, a p-Al0.15Ga0.85N clad layer, and a p-GaN cap layer, are grown on a sapphire substrate. Then, an epitaxial layer other than a light-emitting region is etched until the n-GaN buffer layer is exposed. Next, in a similar process, etching is performed up to anywhere within the p-Al0.15Ga0.85N clad layer so that a 4-μm-wide stripe region in the form of a ridge remains. The length from the light-emitting facet to the opposite facet is between 30 and 250 μm.

REFERENCES:
patent: 5537433 (1996-07-01), Watanabe
patent: 5727008 (1998-03-01), Koga
patent: 6285696 (2001-09-01), Bour et al.
patent: 6323052 (2001-11-01), Horie et al.
patent: 11-074559 (1999-03-01), None
H. Kressel, “Semiconductor Device for Optical Communication” 2ndEdition, 1980, vol. 39, pp. 14.

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