Noise-proof semiconductor device having a Hall effect element

Details Noise-proof semiconductor device having a Hall effect element Noise-proof semiconductor device having a Hall effect element

2005-07-26

2005-07-26

Eckert, George (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

C257S659000

Reexamination Certificate

active

06921955

ABSTRACT:
A noise-proof, integrated semiconductor current detector is disclosed which has formed in a semiconductor substrate a Hall generator for providing a Hall voltage in proportion to the strength of a magnetic field applied, a control current supply circuit for delivering a control current to the Hall generator, and a Hall voltage output circuit for putting out the Hall voltage for detection or measurement. The Hall generator, control current supply circuit, and Hall voltage output circuit are all exposed at one of the pair of opposite major surfaces of the semiconductor substrate. A current-path conductor is attached to this one major surface of the substrate via insulating layers for carrying a current to be detected. A shielding layer of highly electroconductive material is interposed between the current-path conductor and the substrate for protecting all of the Hall generator, control current supply circuit, and Hall voltage output circuit from noise from the current-path conductor as well as from external disturbances.

REFERENCES:
patent: 4709214 (1987-11-01), Higgs
patent: 5552700 (1996-09-01), Tanabe et al.
patent: 5627398 (1997-05-01), Zlebir et al.
patent: 6300168 (2001-10-01), Takeuchi
patent: 6424018 (2002-07-01), Ohtsuka
patent: 6462531 (2002-10-01), Ohtsuka
patent: 6492697 (2002-12-01), Plagens et al.
patent: 6545456 (2003-04-01), Radosevich et al.
patent: 2002/0011841 (2002-01-01), Goto et al.
patent: 2002/0024109 (2002-02-01), Hayat-Dawoodi

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