Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Reexamination Certificate
2005-09-20
2005-09-20
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
C257S520000, C257S750000, C257S751000, C257S758000, C257S762000, C438S678000, C438S687000
Reexamination Certificate
active
06946716
ABSTRACT:
A process is described for the fabrication of submicron interconnect structures for integrated circuit chips. Void-free and seamless conductors are obtained by electroplating Cu from baths that contain additives and are conventionally used to deposit level, bright, ductile, and low-stress Cu metal. The capability of this method to superfill features without leaving voids or seams is unique and superior to that of other deposition approaches. The electromigration resistance of structures making use of CU electroplated in this manner is superior to the electromigration resistance of AlCu structures or structures fabricated using Cu deposited by methods other than electroplating.
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Andricacos Panayotis Constantinou
Deligianni Harikilia
Dukovic John Owen
Edelstein Daniel C.
Horkans Wilma Jean
Connolly Bove & Lodge & Hutz LLP
Flynn Nathan J.
Forde Remmon R.
Trepp Robert M.
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