Silicon nitride based substrate for semi-conductor components

Details Silicon nitride based substrate for semi-conductor components Silicon nitride based substrate for semi-conductor components

2005-07-12

2005-07-12

Stein, Stephen (Department: 1775)

Stock material or miscellaneous articles

Composite

Of inorganic material

C428S446000, C428S448000, C501S092000, C501S097400

Reexamination Certificate

active

06916560

ABSTRACT:
The invention relates to a silicone nitride based substrate for semi-conductor components, said substrate containing silicon nitride (Si3N4), silicon carbide (SIC) and silicon oxynitride(Si2N2O) as crystalline phases. The silicon phase content is less or equal to 5%, the shrinkage during production is less than 5% and the open porosity of the substrate is less than 15% vol. %. The invention also relates to a method for the production and use of said substrate as an element of semi-conductor components, particularly thin film solar cells, and semi-conductor components which contain said substrate.

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patent: 831 077 (1998-03-01), None
patent: 00/32537 (2000-06-01), None
*C.Hebling et al.: “Dunnschichtsolarzellen aus kristallinem Silicium” Spektrum der Wissenschaft, No. 2, -Feb. 1999 p. 10-12, XP001040732 cited in the application p. 10, col. 3, paragraph 4 -p. 11, col. 1, paragraph 2, (German only).
Y.W. Kim et al (Mater. Res. Soc. Symp. Proc., (month unavailable) 1993, vol. 287, pp 265-270) “Tape Casting of Silicon Nitride” Structural Ceramics Lab., Korea Institute of Science and Technology.

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