Method for producing semiconductor device

Details Method for producing semiconductor device Method for producing semiconductor device

1995-09-08

1998-01-27

Niebling, John

Fishing, trapping, and vermin destroying

437907, 148DIG16, 148DIG93, 117 8, H01L 21428

Patent

active

057121915

ABSTRACT:
In producing a thin film transistor, after an amorphous silicon film is formed on a substrate, a nickel silicide layer is formed by spin coating with a solution (nickel acetate solution) containing nickel as the metal element which accelerates (promotes) the crystallization of silicon and by heat treating. The nickel silicide layer is selectively patterned to form island-like nickel silicide layer. The amorphous silicon film is patterned. A laser light is irradiated while moving the laser, so that crystal growth occurs from the region in which the nickel silicide layer is formed and a region equivalent to a single crystal (a monodomain region) is obtained.

REFERENCES:
patent: 4177372 (1979-12-01), Kotera
patent: 4330363 (1982-05-01), Biegesen
patent: 4406709 (1983-09-01), Celler
patent: 5403772 (1995-04-01), Zhang
patent: 5488000 (1996-01-01), Zhang
patent: 5591668 (1997-01-01), Maegawa
S. Caune, et al., "Combined CW Laser and Furnace Annealing of Amorphous Si and Ge in Contact With Some Metals," Applied Surf. Sci. 36 (Jan. 1989), pp. 597-604.

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