Source controlled operation of non-volatile memories

Details Source controlled operation of non-volatile memories Source controlled operation of non-volatile memories

Filed on

2005-09-27

Date issued

2005-09-27

Examiner

Tran, M. (Department: 2818)

Patent Class

Static information storage and retrieval

SubClass

Floating gate

SubSubClass

Particular biasing

Other Related Categories

C365S185180

Type

Reexamination Certificate

Status

active

Patent number

06950348

Description

ABSTRACT:
Non-volatile memory such as flash EEPROM has memory cells that may be programmed in parallel using a self-limiting programming technique. Individual cells have charge storage units that may be charged by hot electrons in a self-limiting manner. As the charge storage unit reaches the required level of charge, hot electrons are no longer generated, or are generated in reduced number. The level of charge at which hot electron generation stops is determined by the voltage applied to the cell. Thus, several cells may be programmed in parallel, each self-limiting at a charge level corresponding to the voltage applied.

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EPO/ISA, “Notificatioh of Transmittal of the International Search Report and the Written Opinion of the International Searching Authority, or the Declaration”, mailed in corresponding PCT/US2004/019347 on Jan. 24, 2005, 13 pages.

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