Process of making a semiconductor device using crystal growth by

Details Process of making a semiconductor device using crystal growth by Process of making a semiconductor device using crystal growth by

1995-02-27

1997-02-11

Thomas, Tom

Fishing, trapping, and vermin destroying

437 89, 437 90, 437110, H01L 2144, H01L 2148

Patent

active

056020570

ABSTRACT:
A semiconductor device includes a substrate, a recess formed on the substrate, a first conductive type semiconductor region and a second conductive type semiconductor region having an opposite conductive type to the first conductive type formed in the recess formed on the substrate, and wiring portions, wherein the surfaces of the substrate, the first conductive type semiconductor region and the second conductive type semiconductor region and are continuously on one plane, and the wiring portions connected respectively to the first conductive type semiconductor region and the second conductive type semiconductor region are formed on and in contact with the plane and are all substantially on the same plane and electrically independent from each other.

REFERENCES:
patent: 3411051 (1968-11-01), Kilby
patent: 4983539 (1991-01-01), Yamagata et al.
patent: 5008206 (1991-04-01), Shinohara et al.
patent: 5010033 (1991-04-01), Tokunaga et al.
patent: 5045907 (1991-09-01), Solomon
patent: 5084410 (1992-01-01), Eguchi et al.
patent: 5103851 (1992-04-01), Nishida et al.
patent: 5176557 (1993-01-01), Okunuki et al.
Jastrzebski, L., "Silicon CVD for SOI: Principles and Possible Applications" Solid State Technology, vol. 27, No. 9, pp. 239-243 Sep. 1984.

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