Wiring structure having a slit dummy

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means

Reexamination Certificate

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Details

C257S508000, C257S510000, C257S513000, C257S524000

Reexamination Certificate

active

06917092

ABSTRACT:
A wiring structure includes wiring embedded in an insulating layer. A plurality of slit dummies each of that spaced each other are formed in the wiring. The wiring has a first portion that has a width wider than a reference width, and has a second portion that has a width shallower than the reference width. A distance of each slit dummy is less than a width of the reference width. The slit dummies are not formed in the second portion of the wiring.

REFERENCES:
patent: 5094973 (1992-03-01), Pang
patent: 5539240 (1996-07-01), Cronin et al.
patent: 5602423 (1997-02-01), Jain
patent: 10-299085 (1988-08-01), None
patent: 06-318590 (1994-11-01), None
patent: 08-213397 (1996-08-01), None
patent: 09-008039 (1997-01-01), None
patent: 2001-267318 (2001-09-01), None

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