Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

1995-10-30

1997-04-22

Niebling, John

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

438674, 438399, 438665, H01L 2170

Patent

active

056228880

ABSTRACT:
A semiconductor device has a capacitive element with excellent leak current characteristics which has a tungsten film with a roughened surface for increasing the surface of a lower electrode. A capacitive element for use in a VLSI memory circuit such as a DRAM or the like is fabricated by forming a thin, roughened tungsten film selectively on a surface of a lower electrode of polysilicon by chemical vapor-phase growth and forming a capacitive insulating film on the surface of the lower electrode of polysilicon, densifying the capacitive insulating film, and forming an upper electrode of a metal element.

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"A High-C Capacitor (20.4 fF/.mu.m.sup.2) With Ultrathin CVD--Ta.sub.2 O.sub.5 Films Deposited on Rugged Poly-Si for High Density DRAMs," by P.C. Fazan et al., 1992 IEEE, IEDM 92, pp. 263-266.

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