Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – material with...
Reexamination Certificate
2005-01-11
2005-01-11
Tran, Minhloan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Non-single crystal, or recrystallized, material with...
C257S061000, C257S066000, C257S069000, C257S070000, C257S072000, C257S075000
Reexamination Certificate
active
06841797
ABSTRACT:
A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.
REFERENCES:
patent: 5986306 (1999-11-01), Nakajima et al.
patent: 6410368 (2002-06-01), Kawasaki et al.
patent: 1 049 144 (2000-11-01), None
patent: 2000-68520 (2000-03-01), None
Geis et al., “Crystalline Silicon on Insulators by Graphoepitaxy,” IEEE 1979, pp. 210-212.
Geis et al., “Grapho-epitaxy of Silicon on Fused Silica Using Surface Micropatterns and Laser Crystallization,” J. Vac. Sci. Tech., 16(6), Nov./Dec. 1979, pp. 1640-1643.
Lam et al., “Characteristics of MOSFETS Fabricated in Laser-Recrystallized Polysilicon Islands with a Retaining Wall Structure on an Insulating Substrate, ” IEEE Electron Device Letters, vol. EDL-1, No. 10, 1980, pp. 206-208.
Smith et al., “Oriented Crystal Growth on Amorphous Substrates Using Artificial Surface-Relief Gratings,” Appl. Phys. Lett 32(6), 1978, pp. 349-350.
Biegelsen et al., “Laser-induced Crystallization of Silicon Islands on Amorphous Substrates: Multilayer Structures,” Appl. Phys. Lett. 38(3), 1981, pp. 150-152.
Akiba Mai
Arao Tatsuya
Dairiki Koji
Hayakawa Masahiko
Isobe Atsuo
Dickey Thomas L.
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
Tran Minhloan
LandOfFree
Semiconductor device formed over a surface with a drepession... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device formed over a surface with a drepession..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device formed over a surface with a drepession... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3411794