Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2005-05-17
2005-05-17
Font, Frank G. (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S50400H
Reexamination Certificate
active
06894293
ABSTRACT:
A system and method are used to isolate a first gas from a second gas using a third gas. A first chamber includes an element that emits light based on a first gas. A second chamber uses the emitted light to perform a process and includes the second gas. A gaslock that couples the first chamber to the second chamber. A gas source supplies a third gas between the first and the second gas in the gaslock, such that the first gas is isolated from the second gas in the gaslock. The first and third gas can be pumped from the first chamber and separated from one another, such that the first gas can be recycled for reuse to form the emitting light.
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Copy of Danish Search Report for Singapore Appln. 200306781-6 dated Jun. 21, 2004.
U.S. Appl. No. 10/392,793, Roux.
ASML Holding N.V.
Font Frank G.
Hughes James P.
Sterne Kessler Goldstein & Fox P.L.L.C.
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