Process for making patterns in resist and for making ion absorpt

Details Process for making patterns in resist and for making ion absorpt Process for making patterns in resist and for making ion absorpt

1977-05-05

1978-07-18

Pianalto, Bernard D.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

427 36, 427 38, 427 54, 427259, B05D 306

Patent

active

041017820

ABSTRACT:
Disclosed is a process for forming resist patterns on selected substrates and includes the steps of forming an ion absorption mask on the surface of a thin supporting membrane and thereafter aligning the mask with a substrate having a layer of resist thereon. Next, the ion absorption mask is exposed to a beam of ions which pass through certain areas of the absorption mask and into the resist layer to thereby expose selected regions in the resist layer (i.e., to increase or decrease the solubility of the resist to a chosen developer). In a specific embodiment of the invention, the ion absorption mask is formed by initially anodizing an aluminum substrate to form a thin coating of aluminum oxide thereon, and thereafter depositing a gold mask on one surface of the aluminum oxide coating. Certain regions of both the aluminum oxide coating and the aluminum substrate beneath the gold mask are removed to expose the aluminum oxide beneath the gold mask, thereby forming a thin taut aluminum oxide membrane which supports the gold ion absorption mask.

REFERENCES:
patent: 3529960 (1970-09-01), Sloan
Basious, p. 4210, IBM Tech. Dis. Bull., vol. 18, No. 12 May 76.

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