Semiconductor device manufacturing: process – With measuring or testing
Reexamination Certificate
2005-04-26
2005-04-26
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
With measuring or testing
C438S149000
Reexamination Certificate
active
06884636
ABSTRACT:
A method of fabricating an infrared detector, a method of controlling the stress in a polycrystalline SiGE layer and an infrared detector device is disclosed. The method of fabricating includes the steps of forming a sacrificial layer on a substrate; patterning said sacrificial layer; establishing a layer consisting essentially of polycrystalline SiGe on said sacrificial layer; depositing an infrared absorber on said polycrystalline SiGe layer; and thereafter removing the sacrificial layer. The method of controlling the stress in a polycrystalline SiGe layer deposited on a substrate is based on varying the deposition pressure. The infrared detector device comprises an active area and an infrared absorber, wherein the active area comprises a polycrystalline SiGe layer, and is suspended above a substrate.
REFERENCES:
patent: 4239312 (1980-12-01), Myer et al.
patent: 4902894 (1990-02-01), Butler et al.
patent: 5010251 (1991-04-01), Grinberg et al.
patent: 5021663 (1991-06-01), Hornbeck
patent: 5119328 (1992-06-01), Matsumoto et al.
patent: 5220188 (1993-06-01), Higashi et al.
patent: 5220189 (1993-06-01), Higashi et al.
patent: 5241193 (1993-08-01), Pfiester et al.
patent: 5286976 (1994-02-01), Cole
patent: 5291055 (1994-03-01), Farhoomand et al.
patent: 5300915 (1994-04-01), Higashi et al.
patent: 5367167 (1994-11-01), Keenan
patent: 5369280 (1994-11-01), Liddiard
patent: 5399897 (1995-03-01), Cunningham et al.
patent: 5640013 (1997-06-01), Ishikawa et al.
patent: 5883564 (1999-03-01), Partin
patent: 6017779 (2000-01-01), Miyasaka
patent: 6194722 (2001-02-01), Fiorini et al.
patent: 6210988 (2001-04-01), Howe et al.
patent: 6211560 (2001-04-01), Jimenez et al.
patent: 6238581 (2001-05-01), Hawkins et al.
patent: 6274462 (2001-08-01), Fiorini et al.
patent: 6478974 (2002-11-01), Lebouitz et al.
patent: 6534381 (2003-03-01), Cheung et al.
patent: 866701 (1998-09-01), None
patent: 2765245 (1997-06-01), None
patent: WO 9116607 (1991-10-01), None
patent: WO 9313561 (1993-07-01), None
patent: WO 9326050 (1993-12-01), None
Huang et al.; Low-temperature epitaxy of phosphorus doped Si and Si/sub 1-x/Ge/sub x/films by RTP/VLP-CVD; pp. 465-467; Conference on Solid-State and Integrated Circuit Technology Oct. 24-28, 1995; Beijing, China.*
Wolf and Tauber; “Silicon Processing for the VLSI Era vol. 1: Process Technology” pp. 168-170; Lattice Press © 1986; Sunset Beach, California.*
Theresa A. Core, et al., “Fabrication Technology for an Integrated Surface-Micromachined Sensor”Solid State Technology, Oct. 1993, pp. 39-44.
Published European Search Report for Interuniversitair Micro-Elektronica Centrum, EP 02 07 7978, dated Oct. 9, 2003.
Tsu-Jae King et al., “Deposition and Properties of Low-Pressure Chemcal-Vapor Deposited Polycrstaline Silicon-Germanium Films”, Journal of the Electrochemical Society, Electrochemical Society, Manchester, New Hampshire, US, vol. 141, No. 8, pp 2235-2241, Aug. 1, 1994.
Tsu-Jae King et al., “Polycrystalline Silicon-Germanium Thin-Film Transistors”, IEEE Transactions on Electron Devices, IEEE Inc., New York, US, vol. 41, No. 9, pp. 1581-1591, Sep. 1, 1994.
Syun-Ming Jang, et al., “Thermal Stability of Si/i1-xGex/Si Hetrostructures Deposited By Very Low Pressure Chemical Vapor Deposition”, Applied Physics Letters, American Institute of Physics, New York, US, vol. 61, No. 3, pp. 315-317, Jul. 20, 1992.
P. Van Gerwen, et al., “Thin Film Boron Doped Polycrystalline Silicon70%-Germanium30% for Thermopiles”Transducers 95: Eurosensors IX, The 8thInternational Conference on Solid-State Sensors and Actuators and Eurosensors, Stockholm, Sweden, Jun. 25-29, 1995, pp. 210-213.
P. Van Gerwen, et al., “Thin-film boron-doped polycrystalline silicon70%-germanium30% for thermopiles” 0924-4247/96/S1500@1996Elseveier Sciences, S.A.
Syun-Ming Jang, et al. “Thermal Stability of Si/Si1-xGex/Si heterostructures deposited by very low pressure chemical vapor deposition”App.Phys.Lett., vol. 61, No. 3, Jul. 20, 1992.
Tsu-Jae King and Krishna C. Saraswat, “Deposition and Properties of Low-Pressure Chemical Vapor Deposited Polycrystalline Silicon-Germanium Films”J. Electrochem Co.vol. 141, No. 8, Aug. 1994.
D. Maier-Schneider, et al., “Variations in Young's modulus and intrinsic stress of LPCVD-polysilicon due to high temperature annealing,”J. Micormech, Microeng.5 (1995) pp. 121-124.
Sherif Sedky, et al., Thermally Insulated Structures for IR Bolometers, Made of Polycrystalline Silicon Germanium Alloys—. . .Transducers '97, 1997 International Conference on Solid-Sate Sensors and Actuators, Chicago, Jun. 16-19, 1997.
P. Steiner, et al., “Micromachining applications of porous silicon,”Elsevier Science, Thin Solid Films, 255 (1995), pp. 52-58.
Akio Tanaka, et al., “Infrared Focal Plane Array Incorporating Silicon IC Process Compatible Bolometer”IBEE Transactions on Electron Devices, vol. 43, No. 11, Nov. 1996, pp. 1844-1850.
M. H. Unewisse, et al., “The Growth and Properties of Semiconductor Bolometers for Infrared Detection,” SPIE vol. 2554Growth and Characterization of Materials for Infrared Detectors, Jul. 1995 pp. 43-54.
R. A. Wood, “Uncooled thermal imaging with monolithic silicon focal planes,” SPIE vol. 202Infrared Technology XIX(1993), pp. 322-329.
Uncooled infrared focal-. . .Laser Focus World, Dec. 1995.
Wolf and Tauber; Silicon Processing for the VLSI Era, vol. 1: Process Technology; pp. 171-173; Lattice Press 1986, Sunset Beach, California.
Franke et al., “Post-CMOS Integration of Germanium Microstructures”, University of California at Berkeley, 1999 IEEE, pp. 630-637.
King et al., “Deposition and Properties of Low-Pressure Chemical-Vapor Deposited Polycrystalline Silicon-Germanium Films”, Journal of the Electrochemical Society, vol. 141, No. 8, pp. 2235-2241 (1994).
Baert Christiaan
Caymax Matty
Fiorini Paolo
Sedky Sherif
Fourson George
Interuniversitair Micro-Elektronica Centrum (IMEC,vzw)
McDonnell Boehnen & Hulbert & Berghoff LLP
Toledo Fernando
LandOfFree
Method of fabrication of an infrared radiation detector and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of fabrication of an infrared radiation detector and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabrication of an infrared radiation detector and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3407060