Ferroelectric capacitor

Details Ferroelectric capacitor Ferroelectric capacitor

2005-03-29

2005-03-29

Reichard, Dean A. (Department: 2831)

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

C361S321100, C361S321500, C361S311000, C361S313000, C361S306100, C361S305000

Reexamination Certificate

active

06873517

ABSTRACT:
A ferroelectric capacitor including a silicon oxidation layer, a lower electrode, a ferroelectric layer and an upper electrode formed on a silicon substrate. A part of at least any one of the lower and upper electrodes is formed of a material selected from the group consisting of TiOx, TaOx and ReOx.

REFERENCES:
patent: 5164808 (1992-11-01), Evans, Jr. et al.
patent: 6693791 (2004-02-01), Nakamura
patent: 0 409 018 (1991-01-01), None
patent: 3-214717 (1991-09-01), None
patent: 3-253065 (1991-11-01), None
patent: 4-367211 (1992-12-01), None
Amanuma et al., “Ferroelectric Properties of Sol-Gel Derived Pb(Zr, Ti)O3Thin Films,” Jpn. J. Appl. Phys. 1993;32:4150-4153.
Fox et al., “Pt/Ti/SiO2/Si substrates,” J. Mater. Res. 1995;10(6):1508-1515.
Nakao et al., “Study on Ferroelectric Thin Films for Application to NDRO Non-volatile Memories,” Integrated Ferroelectrics 1995;6:23-34.

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